a-IGZO THIN FILM TRANSISTORS WITH CHANNEL LAYER DEPOSITED AT ROOM TEMPERATURE AND 250°C

被引：0
|
作者：
Deng, Wei [1 ]
He, Xin [1 ]
Xiao, Xiang [2 ]
Wang, Ling [2 ]
Meng, Weizhi [2 ]
Zhang, Shengdong [1 ,2 ]
机构：
[1] Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China
[2] Peking Univ, Key Lab TFT & Adv Display, Shenzhen 508055, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The a-IGZO thin film transistors with channel layer deposited at room temperature and 250 degrees C are fabricated in this work. Results show the TFTs with IGZO film deposited at 250 degrees C have lower threshold voltage, higher carrier mobility, and better sub-threshold slope than that with IGZO film deposited at room temperature. X-ray photoelectron spectroscopy measurement shows the proportion of Indium atoms in the IGZO film deposited at 250 degrees C is higher than at room temperature.
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页数：3
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