Photoluminescence of oxidized porous silicon under UV-light illumination

被引：26
|
作者：
Zhao, Y
Yang, DR [1 ]
Li, DS
Jiang, MH
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 116卷 / 01期
基金：
中国国家自然科学基金;
关键词：
blue emission; PECVD method; porous silicon; oxidation;
D O I：
10.1016/j.mseb.2004.08.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The blue emission resulting from the as-prepared and oxidized porous silicon (PS) was reported in this paper. After the oxidation in plasma enhanced chemical vapor deposition (PECVD) process, the blue emission intensity in photoluminescence (PL) spectra increased because it is believed that the blue emission came from defects in silicon dioxides. Under UV-light illumination, the stability of the blue emission of the N-type oxidized PS was improved due to oxidation. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：95 / 98
页数：4
相关论文
共 50 条
  • [1] Study of the photoluminescence instability of porous silicon under light illumination
    Chang, IM
    Fan, JC
    Chen, YF
    [J]. SOLID STATE COMMUNICATIONS, 1996, 100 (03) : 157 - 162
  • [2] Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination
    Hamadeh, H.
    Naddaf, M.
    Jazmati, A.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (24)
  • [3] Photoluminescence from porous silicon anodized with monochromatic light illumination
    Matsumoto, T
    Masumoto, Y
    Arata, G
    Mimura, H
    [J]. ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 535 - 540
  • [4] PHOTOLUMINESCENCE OF ANODICALLY OXIDIZED POROUS SILICON
    FILIPPOV, VV
    PERSHUKEVICH, PP
    BONDARENKO, VP
    DOROFEEV, AM
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1994, 184 (02): : 573 - 580
  • [5] EVOLUTION OF PHOTOLUMINESCENCE OF POROUS SILICON UNDER LIGHT EXPOSURE
    CHANG, IM
    CHUO, GS
    CHANG, DC
    CHEN, YF
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5365 - 5368
  • [6] Photoreduction of Graphene Oxide Nanosheet by UV-light Illumination under H2
    Matsumoto, Yasumichi
    Morita, Masato
    Kim, Su Yeon
    Watanabe, Yusuke
    Koinuma, Michio
    Ida, Shintaro
    [J]. CHEMISTRY LETTERS, 2010, 39 (07) : 750 - 752
  • [7] Photoluminescence and electroluminescence in partially oxidized porous silicon
    Univ of Rochester, Rochester, United States
    [J]. Solid State Commun, 7 (429-433):
  • [8] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN PARTIALLY OXIDIZED POROUS SILICON
    TSYBESKOV, L
    DUTTAGUPTA, SP
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1995, 95 (07) : 429 - 433
  • [9] Blue Photoluminescence of Oxidized Films of Porous Silicon
    Filippov, V.V.
    Pershukevich, P.P.
    Kuznetsova, V.V.
    Khomenko, V.S.
    Dolgii, L.N.
    [J]. Journal of Applied Spectroscopy, 2000, 67 (05) : 852 - 856
  • [10] The properties of structures based on oxidized porous silicon under the effect of illumination and a gas environment
    Bilenko, DI
    Belobrovaya, OY
    Zharkova, ÉA
    Terin, DV
    Khasina, EI
    [J]. SEMICONDUCTORS, 2005, 39 (07) : 800 - 804
12345