High Temperature and High CMR Gate Driver Circuit for Wide-Band-Gap Power Semiconductors

被引：0
|
作者：
Langmaack, N. [1 ]
Tareilus, G. [1 ]
Henke, M. [1 ]
机构：
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Elect Machines Tract & Drives, Braunschweig, Germany
来源：
2015 IEEE 11TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS 2015) | 2015年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Wide-band-gap semiconductors continuously keep on pushing the limits of power electronic devices to higher switching speeds and higher operating temperatures. The proposed new gate driver circuit is designed consequently to meet the demands of these power semiconductor devices for high common mode rejection and the capability to work at high ambient temperatures.
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页码：479 / 483
页数：5
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