The deep-saturation study of drain current in SOI MOSFET's transfer characteristics

In this work, the electric characteristics of SOI MOSFET are investigated. The deep-saturation of drain current in transfer character is found in many transistors. After applying the channel hot-carriers stress, the electric parameters degradation is very different from that of the normal transistors. It has been shown that the deep-saturation effect in NMOSFET disappears after stress, but in PMOS, this effect is not weakened by hot-carriers injection. The results are of importance for reliability designing and reliability strengthening of SOI devices.