Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se

被引：590

作者：

Ren, Zhi ^{[1
]}

Taskin, A. A. ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 24期

关键词：

BERRYS PHASE; GRAPHENE; STATES; BAND;

D O I：

10.1103/PhysRevB.82.241306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that the topological insulator Bi2Te2Se presents a high resistivity exceeding 1 Omega cm and a variable-range hopping behavior, and yet presents Shubnikov-de Haas oscillations coming from the topological surface state. Furthermore, we have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport in this material. Our results demonstrate that Bi2Te2Se is, to our knowledge, the best material to date for studying the surface quantum transport in a topological insulator.

引用

页数：4

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