High temperature growth of the dilute nitride GaAsN using a nitrogen ECR plasma source

被引：0
|
作者：
Usher, Brian [1 ]
Warminski, Tadeus [1 ]
Dieing, Thomas [1 ]
Prince, Kathryn [2 ]
机构：
[1] La Trobe Univ, Dept Elect Engn, Bundoora, Vic 3086, Australia
[2] Australian Nucl Sci & Technol Org, Menai, NSW, Australia
来源：
2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2 | 2006年
关键词：
dilute nitride; ECR plasma source; GaAsN; MBE; SIMS; XRD; photoluminescence;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
The dilute nitride GaAsN has been grown by MBE using an ECR nitrogen plasma source. This has allowed growth at a substrate temperature of 600 degrees C, which in combination with an ion trap, has produced higher quality as-grown material. Layer chemistry has been assessed by SIMS, XRD and optical quality measured using photoluminescence.
引用
收藏
页码：537 / +
页数：2
相关论文
共 50 条
  • [1] Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN
    Usher, B. F.
    Warminski, T.
    Dieing, T.
    Prince, Kathryn
    SURFACE SCIENCE, 2007, 601 (24) : 5800 - 5802
  • [2] Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN films
    Sarney, Wendy L.
    Svensson, Stefan P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (05):
  • [3] Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates
    Araki, Yoshiaki
    Yamaguchi, Masahito
    Ishikawa, Fumitaro
    NANOTECHNOLOGY, 2013, 24 (06)
  • [4] MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source
    Zhukov, AE
    Zhao, R
    Specht, P
    Ustinov, VM
    Anders, A
    Weber, ER
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) : 413 - 419
  • [5] SOURCE OF REACTIVE NITROGEN BASED ON ECR PLASMA
    Vodopyanov, A. V.
    Mansfeld, D. A.
    Golubev, S. V.
    PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2013, (01): : 231 - 233
  • [6] High Quality MBE grown dilute nitride quantum wells with novel Nitrogen-Plasma Source design
    Vijaya, Gopi Krishna
    Freundlich, Alex
    Tang, Dinghao
    Smith, David J.
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 2900 - 2902
  • [7] Low hydrogen content silicon nitride films deposited at room temperature with an ECR plasma source
    Isai, GI
    Holleman, J
    Wallinga, H
    Woerlee, PH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (10) : C649 - C654
  • [8] High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source
    Pinault, MA
    Freundlich, A
    Coaquira, JAH
    Fotkatzikis, A
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)
  • [9] Comparison between monomethyl hydrazine and ECR plasma activated nitrogen as a nitrogen source for CBE growth of GaN
    Yonemura, S
    Yaguchi, T
    Tsuchiya, H
    Shimoyama, N
    Suemasu, T
    Hasegawa, F
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 81 - 85
  • [10] InN thin-film growth using an ECR plasma source
    Sato, Y
    Sato, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 171 - 175
12345