Irreversible Degradation Behaviors of an Electrolyte-gated Polyaniline (PANI) Nanowire Field-effect Transistor

被引:8
|
作者
Lee, Seung-Yong [1 ]
Lee, Sang-Kwon [1 ]
Lim, Hyuneui [2 ]
Choi, Gyoung-Rin [2 ]
机构
[1] Chonbuk Natl Univ, SPRC, Dept Semicond Sci & Technol, Jeonju 561756, South Korea
[2] KIMM, Nanomech Syst Res Div, Taejon 305343, South Korea
关键词
Polyaniline; Nanowire; Degradation; Coulombic repulsion; CONDUCTING POLYMER; POLYPYRROLE; SENSOR; COMPOSITE; ARRAYS;
D O I
10.3938/jkps.57.1416
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We studied the degradation properties of a conducing polyaniline (PANI) nanowire field-effect transistor (FET) operating in a three-probe FET structure in an electrolyte solution on a SiO(2)/Si substrate. We observed that the current-voltage characteristics of an electrolyte-gated PANI nanowire FET swept for 13 cycles in a cyclic potential mode exhibited clear irreversible degradation, as shown by the drain current-gate voltage curves. We propose that the degradation of the PANI nanowire FET, which indicates a conductance loss and gain in the oxidation and reduction modes, respectively, is attributable to the intensity of Coulombic repulsion in the cycle mode.
引用
收藏
页码:1416 / 1420
页数:5
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