Intrinsic defects in semi-insulating SiC: Deep levels and their roles in carrier compensation

被引：4
|
作者：
Son, N. T. [1 ]
Carlsson, P. [1 ]
Magnusson, B. [1 ]
Janzen, E. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
vacancy; carrier compensation; semi-insulating; electron paramagnetic resonance;
D O I：
10.4028/www.scientific.net/MSF.556-557.465
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Vacancies, divacancies and carbon vacancy-carbon antisite pairs are found by electron paramagnetic resonance (EPR) to be dominant defects in high-purity semi-insulating (HPSI) 4HSiC substrates having different thermal activation energies of the resistivity ranging from -0.8 eV to similar to 1.6 eV. Based on EPR results and previously reported data, the energy positions of several acceptor states of the vacancies and vacancy-related complexes are estimated. These deep levels are suggested to be associated to different thermal activation energies and responsible for the semi-insulting behaviour in HPSI SiC substrates. Their role in carrier compensation is discussed.
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页码：465 / 468
页数：4
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