Influence of carrier injection on resistive switching of CaCu3Ti4O12 thin films with Ni electrode

被引：5
|
作者：
Chang, Li-Chun [1 ,2 ]
Yang, Cheng-Huan [3 ]
Kao, Hsuan-Ling [3 ]
机构：
[1] Ming Chi Univ Technol, Dept Mat Engn, Taipei, Taiwan
[2] Ming Chi Univ Technol, Ctr Thin Film Technol & Applicat, Taipei, Taiwan
[3] Chang Gung Univ, Dept Elect Engn, Tao Yuan, Taiwan
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 15期
关键词：
Nonvolatile memory; Thin film; Perovskite; Sputtering; Nickel;
D O I：
10.1016/j.tsf.2011.01.150
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu3Ti4O12 (CCTO) films was studied by current-voltage (I-V) measurements. The electron injection was reduced by annealing the sample in an O-2 atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole-Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：5095 / 5098
页数：4
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