Scanning tunneling spectroscopic study of monolayer 1T-TaS2 and 1T-TaSe2

被引：54
|
作者：
Lin, Haicheng [1 ,2 ]
Huang, Wantong [1 ,2 ]
Zhao, Kun [1 ,2 ]
Qiao, Shuang [1 ,2 ]
Liu, Zheng [3 ]
Wu, Jian [1 ,2 ]
Chen, Xi [1 ,2 ]
Ji, Shuai-Hua [1 ,2 ]
机构：
[1] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Inst Adv Studies, Beijing 100084, Peoples R China
来源：
NANO RESEARCH | 2020年 / 13卷 / 01期
基金：
中国国家自然科学基金;
关键词：
monolayer; 1T-TaS2; 1T-TaSe2; commensurate charge density wave (CCDW); Mott gap; band insulator; CHARGE-DENSITY WAVES; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; MOTT-INSULATING STATE; TRANSITION; LIQUID; PHASE;
D O I：
10.1007/s12274-019-2584-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The isostructural and isoelectronic transition-metal-dichalcogenides 1T-TaS2 and 1T-TaSe2 are layered materials with intricate electronic structures. Combining the molecular beam epitaxy growth, scanning tunneling microscopy measurements and first-principles calculations, we prepare monolayer 1T-TaS2 and TaSe2 and explore their electronic structures at the atomic scale. Both two-dimensional (2D) compounds exhibit commensurate charge density wave phase at low temperature. The conductance mapping identifies the contributions from different Ta atoms to the local density of states with spatial and energy resolution. Both 1T-TaS2 and 1T-TaSe2 monolayer are shown to be insulators, while the former has a Mott gap and the latter is a regular band insulator.
引用
收藏
页码：133 / 137
页数：5
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