Imaging of the electric fields and charge associated with modulation-doped 4H/3C/4H polytypic quantum wells in SiC

被引：0

作者：

Mikhov, MK ^{[1
]}

Samson, G ^{[1
]}

Skromme, BJ ^{[1
]}

Wang, R ^{[1
]}

Li, C ^{[1
]}

Bhat, I ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polytypic 3C quantum wells (double Shockley stacking faults) are spontaneously generated during thermal processing of moderately doped 4H-SiC epilayers grown on substrates with heavy n-type doping above similar to 3x10(19) cm(-3). They intersect the wafer surface as straight lines, due to the 8 misorientation of the wafer from the c-axis. We describe observations of electric fields and charge associated with these intersections using electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM). The results are compared to two-dimensional electrostatic simulations.

引用

页码：937 / 938

页数：2

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