Characteristics of Ru etching using ICP and helicon O2/Cl2 plasmas

被引：15
|
作者：
Kim, HW [1 ]
机构：
[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
来源：
THIN SOLID FILMS | 2005年 / 475卷 / 1-2期
关键词：
etching; ruthenium; plasma processing and deposition;
D O I：
10.1016/j.tsf.2004.07.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated and compared the characteristics of Ru etching by employing O-2/Cl-2 inductively coupled plasma (ICP) and helicon plasma. We have studied the variation of Ru etch rate and the Ru to SiO, etch selectivity with varying the gas flow ratio, the bias power, and the total gas flow rate. With optimizing the process for two different plasma sources, we have obtained higher etch rate of Ru electrode by using ICP, compared to by using helicon plasma. We demonstrated the etching slope of greater than 85degrees in terms of real pattern, using ICP. X-ray photoelectron spectroscopy (XPS) revealed that the Ru surface etched using ICP contained less amount of 0 element than using helicon plasma. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：32 / 35
页数：4
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