Microwave Dielectric Properties of a Low-Firing Ba2BiV3O11 Ceramic

被引：21
|
作者：
Li, Jie [1 ]
Li, Chunchun [1 ,2 ]
Wei, Zhenhai [1 ]
Tang, Ying [1 ]
Su, Congxue [1 ]
Fang, Liang [1 ]
机构：
[1] Guilin Univ Technol, Coll Mat Sci & Engn, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, State Key Lab Breeding Base Nonferrous Met & Spec, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Coll Informat Sci & Engn, Guilin 541004, Peoples R China
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 03期
关键词：
SINTERING TEMPERATURE;
D O I：
10.1111/jace.13418
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A low-firing microwave dielectric ceramic Ba2BiV3O11 was prepared via solid-state reaction method. Ba2BiV3O11 ceramic could be well sintered at 840 degrees C-880 degrees C, with a epsilon(r) similar to 14.2, a high Qxf value similar to 68700GHz (at 8.7GHz), and a negative temperature coefficient of -81ppm/degrees C. (f) of Ba2BiV3O11 was tuned to be near zero by formation of a composite with TiO2. 0.7Ba(2)BiV(3)O(11)-0.3TiO(2) ceramic sintered at 910 degrees C showed improved properties with epsilon(r)=15.7, Qxf=53200GHz, and (f)=-2ppm/degrees C.
引用
收藏
页码：683 / 686
页数：4
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