Spin-orbit interaction in InSb nanowires

被引：122
|
作者：
van Weperen, I. [1 ,2 ]
Tarasinski, B. [3 ]
Eeltink, D. [1 ,2 ]
Pribiag, V. S. [1 ,2 ]
Plissard, S. R. [1 ,2 ,4 ]
Bakkers, E. P. A. M. [1 ,2 ,4 ]
Kouwenhoven, L. P. [1 ,2 ]
Wimmer, M. [1 ,2 ]
机构：
[1] Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
[3] Leiden Univ, Inst Lorentz, NL-2300 RA Leiden, Netherlands
[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源：
PHYSICAL REVIEW B | 2015年 / 91卷 / 20期
关键词：
WEAK-LOCALIZATION; SUPERCONDUCTOR; RELAXATION; ELECTRONS;
D O I：
10.1103/PhysRevB.91.201413
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoretical analysis of weak antilocalization, to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of 0.5-1 eV angstrom corresponding to a spin-orbit energy of 0.25-1 meV. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.
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收藏
页数：5
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