Quantitative Determination of Contributions to the Thermoelectric Power Factor in Si Nanostructures

被引：37
|
作者：
Ryu, Hyuk Ju [1 ]
Aksamija, Z. [1 ]
Paskiewicz, D. M. [1 ]
Scott, S. A. [1 ]
Lagally, M. G. [1 ]
Knezevic, I. [1 ]
Eriksson, M. A. [1 ]
机构：
[1] Univ Wisconsin, Madison, WI 53706 USA
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 25期
基金：
美国国家科学基金会;
关键词：
TRANSPORT-PROPERTIES; SILICON NANOWIRES; INVERSION-LAYERS; DEVICES; PERFORMANCE; MEMBRANES; MOBILITY; SYSTEMS; SURFACE; MERIT;
D O I：
10.1103/PhysRevLett.105.256601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report thermoelectric measurements on a silicon nanoribbon in which an integrated gate provides strong carrier confinement and enables tunability of the carrier density over a wide range. We find a significantly enhanced thermoelectric power factor that can be understood by considering its behavior as a function of carrier density. We identify the underlying mechanisms for the power factor in the nanoribbon, which include quantum confinement, low scattering due to the absence of dopants, and, at low temperatures, a significant phonon-drag contribution. The measurements set a target for what may be achievable in ultrathin nanowires.
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页数：4
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