Study on the structural and electrical properties of Mgx Ni1-x Mn2 O4 thin films

被引：0
|
作者：
Zhang Zeng-Hui [1 ,2 ]
Liu Fang [1 ]
Hou Yun [2 ]
Di Wen-Qi [1 ,2 ]
机构：
[1] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2017年 / 36卷 / 04期
基金：
中国国家自然科学基金; 上海市自然科学基金;
关键词：
Mg doping; spinel oxide; negative temperature coefficient of resistance; NTC; TEMPERATURE; GROWTH; OXIDES; PHASE;
D O I：
10.11972/j.issn.1001-9014.2017.04.007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The MgxNi1-xMn2O4 (MNM x = 0, 0. 05, 0. 10, 0. 15, 0. 20) films were grown on Al2O3 substrate by chemical solution deposition method. The effect of Mg doping on the structural properties of MNM thin films was studied by x-ray diffractomer and field emission scanning electron microscopy. The results show that the MNM films have a single cubic spinel structure and the films are smooth and uniform, which have good crystallinity. The electrical measurements show that the conduction of MNM thin films can be described by a variable range hopping model. The values of resistivity, characteristic temperature T-0, temperature coefficient of resistance alpha for MNM thin films were obtained. The Mg concentration dependence of structural and electrical properties for MNM films was investigated.
引用
收藏
页码：415 / 419
页数：5
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