Some peculiarities of low temperature conductivity of silicon diodes

被引：1

作者：

Shwarts, YM ^{[1
]}

Smertenko, PS ^{[1
]}

Sokolov, VN ^{[1
]}

Shwarts, MM ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

JOURNAL DE PHYSIQUE IV | 1998年 / 8卷 / P3期

关键词：

D O I：

10.1051/jp4:1998318

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The forward current-voltage (I-V) characteristics of the n+-p silicon diodes, B-doped with impurity density p=2.10(17) cm(-3) and P-doped with impurity density n=2.10(20) cm(-3), have been investigated in the temperature range from 4.2 K to 293 K. The peculiarities of the low-temperature conductivity of diodes have been studied by the novel differential technique of experimental results treatment. The ranges of power-like and exponential dependencies of the I-V curves have been determined. Different physical mechanisms responsible for the formation of peculiarities of the low-temperature I-V characteristics have briefly been discussed.

引用

页码：75 / 78

页数：4

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