Microcavity lasers directly grown on silicon

被引：0
|
作者：
Li, Haochuan [1 ]
Zhou, Taojie [1 ]
Zhang, Zhan [1 ]
Tang, Mingchu [2 ]
Chen, Siming [2 ]
Liu, Huiyun [2 ]
Zhang, Zhaoyu [1 ]
机构：
[1] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Guangdong, Peoples R China
[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic integration of ultra-compact III-V light sources on silicon is promising for the Si-based on-chip optical interconnects. Here, we present quantum dots micro cavity lasers monolithically grown on silicon with ultra-low energy consumption. (c) 2021 The Author(s)
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页数：2
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