Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells

被引：4
|
作者：
Gupta, R
Lai, KT
Missous, M
Haywood, SK
机构：
[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England
[2] Univ Manchester, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England
来源：
PHYSICAL REVIEW B | 2004年 / 69卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.69.033303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report strong room-temperature intersubband absorption in 80 A strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier quantum wells grown on InP substrates. From the multiple Gamma-Gamma intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range ksimilar to5x10(6)-6x10(6) cm(-1), the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.
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页数：4
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