Transmission Electron Microscopy Study of UV-ozone Cleaned Silicon Surfaces for Application in High Efficiency Photovoltaics

被引：0
|
作者：
Ali, Haider [1 ,2 ]
Gao, Munan [2 ,3 ]
Zin, Ngwe [2 ,3 ,4 ]
Bakhshi, Sara [3 ]
Schoenfeld, Winston V. [1 ,2 ,3 ]
Davis, Kristopher O. [1 ,2 ,3 ]
机构：
[1] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32816 USA
[2] Univ Cent Florida, Florida Solar Energy Ctr, Cocoa, FL 32922 USA
[3] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
[4] Univ Cent Florida, NanoSci Technol Ctr NSTC, Orlando, FL 32826 USA
来源：
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年
关键词：
silicon; atomic layer deposition; transmission electron microscopy; UV ozone;
D O I：
10.1109/pvsc40753.2019.8980798
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The focus of this work is on the characterization of passivated crystalline Si (c-Si) surfaces subjected to various cleaning sequences involving UV ozone (UVo) treatment and HF-dip. A combination of photoconductance decay (PCD) measurements and high-resolution transmission electron microscopy (HRTEM) studies were used to obtain a deeper insight into passivation mechanisms of UVo and its origin at the nano-scale.
引用
收藏
页码：1884 / 1886
页数：3
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