Electronic properties of mechanically induced kinks in single-walled carbon nanotubes

被引:60
|
作者
Bozovic, D [1 ]
Bockrath, M
Hafner, JH
Lieber, CM
Park, H
Tinkham, M
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
关键词
D O I
10.1063/1.1377316
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used an atomic-force microscope tip to mechanically buckle single-walled carbon nanotubes. The resistance of the induced defects ranged from 10 to 100 k Omega and varied with the local Fermi level, as determined by scanned-gate microscopy. By forming two closely spaced defects on metallic nanotubes, we defined quantum dots less than 100 nm in length. These devices exhibited single-electron charging behavior at temperatures up to similar to 165 K. (C) 2001 American Institute of Physics.
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收藏
页码:3693 / 3695
页数:3
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