Effect of MnSb clusters recharge on ferromagnetism in GaSb-MnSb thin films

被引：8
|
作者：
Talantsev, A. [1 ]
Koplak, O. [1 ,2 ]
Morgunov, R. [1 ]
机构：
[1] Inst Problems Chem Phys, Moscow 142432, Russia
[2] T Shevchenko Kiev Natl Univ, UA-01601 Kiev, Ukraine
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 95卷
关键词：
Thin film magnetization; Schottky barrier; MnSb clusters; Hopping conductivity; Charge carrier concentration; MAGNETIC-PROPERTIES; PHYSICS; GROWTH; DIODES;
D O I：
10.1016/j.spmi.2016.04.012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The concentration effect of charge carriers on the magnetic moment of ferromagnetic MnSb nanoclusters embedded in GaSbMn thin films is reported. High concentration of holes enhances the probability of their tunneling through the barrier between the semiconductor matrix and the MnSb nanocluster. Enrichment of the MnSb clusters by Mn2+ ions instead of Mn3+ enhances their ferromagnetism. Dynamics of magnetization relaxation of the MnSb clusters under applied magnetic field has been studied in the 8-300 K temperature range. Magnetic anisotropy constant similar to 3.2.10(4) erg/cm(3) has been determined. The fluctuation field H-F = 7 Oe and the activation volume V-A = 1.7.10(-16) cm(3) have been extracted from magnetic viscosity data. (c) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：14 / 23
页数：10
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