Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories

被引：161
|
作者：
Scott, JF
Ross, FM
deAraujo, CAP
Scott, MC
Huffman, M
机构：
[1] SYMETRIX CORP,COLORADO SPRINGS,CO
[2] FUS SEMICOND,ROCKVILLE,MD 20855
[3] UNIV COLORADO,DEPT ELECT & COMP ENGN,COLORADO SPRINGS,CO 80933
[4] UNIV COLORADO,MICROELECTR LAB,COLORADO SPRINGS,CO 80933
[5] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720
来源：
MRS BULLETIN | 1996年 / 21卷 / 07期
关键词：
D O I：
10.1557/S0883769400035892
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：33 / 39
页数：7
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