Top-gated WSe2 field-effect transistors with Pt contacts

被引：0
|
作者：
Movva, H. C. P. [1 ]
Rai, A. [1 ]
Kang, S. [1 ]
Kim, K. [1 ]
Guchhait, S. [1 ]
Taniguchi, T. [2 ]
Watanabe, K. [2 ]
Tutuc, E. [1 ]
Banerjee, S. K. [1 ]
机构：
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 305044, Japan
来源：
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：131 / 132
页数：2
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