First-principles calculation on the structure stability, hydrogen trapping behaviour, and adhesion properties of the Zr(0001)-ZrC(100) interface

被引:7
|
作者
Wang, Xiaoyan [1 ]
Xu, Canhui [1 ]
Hu, Shuanglin [1 ]
Xiao, Haiyan [2 ]
Zhou, Xiaosong [1 ]
Peng, Shuming [1 ]
机构
[1] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
Zr(0001)-ZrC(100) interface; Structure stability; Hydrogen trapping; Adhesion properties; First-principles calculation; ELASTIC PROPERTIES; STRESS-RELAXATION; IN-SITU; ZRC; OXIDATION; ENERGY; MICROSTRUCTURE; SEGREGATION; CATALYSIS; KINETICS;
D O I
10.1016/j.apsusc.2019.144825
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structure stability, hydrogen trapping behaviour, and adhesion properties of the Zr(0001)-ZrC(100) interface are investigated by first-principle calculations. Periodically distributed distortion and stress-relaxed regions with lengths of 16.6 angstrom are formed to relax the lattice mismatch at the Zr(0001)-ZrC(100) interface. Homogeneous covalent 3Zr-C bonds are formed in the distortion region. The interfacial sinking effect exists only in the interface stress-relaxed region where the interstitial hydrogen has a considerably lower formation energy of -0.61 eV after the zero-point energy correction, than those in the interface distortion region, Zr, and ZrC bulk of 0.95, -0.10, and 1.30 eV, respectively. After the interstitial sites in the interface stress-relaxed region are fully occupied by hydrogen, the interface energy is significantly reduced from 2.34 to 1.52 J/m(2). The work of separation W-sep along the interface is approximately 3.78-3.91 J/m(2), while the brittle fracture of the Zr(0001)-ZrC(100) interface always occurs at the Zr matrix (along the Zr1 layer) with the lowest W-sep of 3.18-2.95 J/m(2). Hydrogen-induced electron localisation exists at the interface, which reduces the interface structure stability. In addition, a hydrogen passivation layer forms owing to the formation of Zr-H and C-H bonds at the interface.
引用
收藏
页数:12
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