Wavelength dependence of the single pulse femtosecond laser ablation threshold of indium phosphide in the 400-2050 nm range

被引：35
|
作者：
Borowiec, A
Tiedje, HF
Haugen, HK
机构：
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada
[3] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada
来源：
APPLIED SURFACE SCIENCE | 2005年 / 243卷 / 1-4期
基金：
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词：
indium phosphide; femtosecond laser ablation of semiconductor; atomic force microscopy;
D O I：
10.1016/j.apsusc.2004.09.105
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present single pulse femtosecond laser ablation threshold measurements of InP obtained by optical, scanning electron, and atomic force microscopy. The experiments were conducted with laser pulses 65-175 fs in duration, in the wavelength range from 400 to 2050 nm, covering the photon energy region above and below the bandgap of InP. The ablation thresholds determined from depth and volume measurements varied from 87 mJ/cm(2) at 400 nm to 250 mJ/cm(2) at 2050 nm. In addition, crater depths and volumes were measured over a range of laser fluences extending well above the ablation threshold. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：129 / 137
页数：9
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