Electronic States of Sulfur Vacancies Formed on a MoS2 Surface

被引:16
|
作者
Kodama, Nagisa [1 ]
Hasegawa, Tsuyoshi [1 ]
Okawa, Yuji [1 ]
Tsuruoka, Tohru [1 ]
Joachim, Christian [1 ,2 ,3 ]
Aono, Masakazu [1 ]
机构
[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
[2] CNRS, CEMES, Nanosci Grp, F-31055 Toulouse, France
[3] CNRS, CEMES, MANA Satellite, F-31055 Toulouse, France
关键词
SCANNING TUNNELING MICROSCOPE; CHEMICAL-REACTION; ATOMIC SWITCH; MANIPULATION; STM;
D O I
10.1143/JJAP.49.08LB01
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sulfur vacancies formed on a MoS2 surface have been predicted to have electronic states at the Fermi level, and to work as conductive atomic scale structures. We made sulfur vacancies on a MoS2 surface by removing sulfur atoms using scanning tunneling microscopy (STM) induced field evaporation, and measured the current voltage (I/V) characteristics of the vacancies. The I/V curve measured at the vacancies showed a linear increase at a zero bias region, indicating the existence of electronic states at the Fermi level. On the other hand, the I/V curve measured at a clean surface showed a gap of about 1 eV around the Fermi level, as was expected from the theoretical calculation. We also successfully carried out manipulation of Au nanoislands, which will be used as nanopads to be connected to a sulfur vacancy chain. (C) 2010 The Japan Society of Applied Physics
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页数:4
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