Water Diffusion in Silica Glass and Wet Oxidation of Si: An Interpretation for the High Speed of Wet Oxidation

被引:14
|
作者
Tomozawa, Minoru [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
基金
美国国家科学基金会;
关键词
STRUCTURAL RELAXATION; TRANSPORT; SURFACE; OXYGEN;
D O I
10.1149/1.3560037
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
It has been postulated that the molecular water, H2O, is mobile but the hydroxyl water, OH, is immobile in silica glass. Further, it has been theorized that H2O and OH are held in a strict equilibrium. This study investigates the behavior of H2O in the oxidation of silicon: It was found that the strict equilibrium was not held, and fast-moving H2O was found to cause silicon oxidation. It is suggested that the diffusion of molecular water, which can diffuse faster than oxygen and has not been directly observed in a normal water diffusion study in silica glass, is responsible for the faster oxidation of silicon in wet oxidation than in dry (oxygen) oxidation. Some indirect evidence for such fast moving molecular water is presented. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3560037] All rights reserved.
引用
收藏
页码:G115 / G118
页数:4
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