A simple technique for the Monte Carlo simulation of transport in quantum wells

被引：0
|
作者：
Kim, Jongchol [1 ]
Chen, Chia-Yu [1 ]
Dutton, Robert W. [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 | 2007年
关键词：
D O I：
10.1007/978-3-211-72861-1_19
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple technique that can be implemented in the Monte Carlo (MC) simulation of transport in a quantum well is reported. The main difference between the proposed technique and existing methods is the use of three dimension momentum (3Dk) particles in the simulation of a quantum region. The use of 3Dk particles within a quantum well structure facilitates the MC simulation of transport in nanoscale devices which contain both the classical and quantum regions.
引用
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页码：77 / 80
页数：4
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