X-band GaAs Phase Driver MMIC optimized for GaN-based Phased-Array Radar Transmit Chain

被引:0
|
作者
van Heijningen, M. [1 ]
Essing, J. [1 ]
van Vliet, F. E. [1 ]
机构
[1] TNO, The Hague, Netherlands
关键词
Gallium-Arsenide; MMICs; phase shifters;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X- band GaN HPA. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a lowcost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5 degrees.
引用
收藏
页码:118 / 121
页数:4
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