First-principles study of oxygen vacancy formation in strained oxides

被引:2
|
作者
Kim, Inseo [1 ]
Lee, Hyungwoo [1 ]
Choi, Minseok [1 ]
机构
[1] Inha Univ, Dept Phys, Incheon 22212, South Korea
基金
新加坡国家研究基金会;
关键词
ELECTRONIC-STRUCTURE; TRANSITION; CRYSTAL; SRTIO3; VISUALIZATION; DEFECTS; COHP;
D O I
10.1063/5.0077043
中图分类号
O59 [应用物理学];
学科分类号
摘要
Based on first-principles density functional theory calculations and chemical bond analyses, we attempted to study the formation of oxygen vacancies (V-O) in strained Ti-based oxides. Structural features (e.g., cell volume and mean Ti-O bond length) exhibit a clear and linear correlation with strain. Further, electronic features (e.g., bandgap and Ti-O covalent bond strength) exhibit similar trends for hydrostatic, biaxial, and uniaxial strains, except for shear strains. We investigated the impact of strain on the formation of V-O and found that the formation energy in strained oxides was almost linearly linked to changes in the cell volume, bandgap, and Ti-O bond strength of the host oxide, where V-O were formed. However, these correlations are not valid in compressively strained systems, which include Ti-O bonds-the bond length being shorter than the sum of Ti and O ionic radii, and shear-strained systems.
引用
收藏
页数:10
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