Atomistic modeling of ultrathin Fe films on Cu (111)

被引：1
|
作者：
Rakotomahevitra, A [1 ]
Wille, LT [1 ]
Rakotomalala, MS [1 ]
机构：
[1] Florida Atlantic Univ, Dept Phys, Boca Raton, FL 33431 USA
来源：
NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION | 2000年 / 616卷
关键词：
D O I：
10.1557/PROC-616-183
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have used the embedded-atom method (EAM) to perform molecular-dynamics (MD) simulations of iron films grown on Cu(111). The iron atoms were randomly deposited, one at a time, above the surface just within the force range of the nearest surface atom. The growth mode is discussed by following the iron film coverage for an incident-atom energy ranged from 0.5eV to 15eV. A transition from island to layer by layer growth is observed as a function of incident energy. The effect of deposition rate is also studied.
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页码：183 / 188
页数：4
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