Recent developments in nanofabrication using ion projection lithography

被引:33
|
作者
Tseng, AA [1 ]
机构
[1] Arizona State Univ, Dept Mech & Aerosp Engn, Tempe, AZ 85287 USA
关键词
ion sources; nanofabrication; nanolithography; nanostructures; resists;
D O I
10.1002/smll.200500050
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ion projection lithography (IPL) is an emerging technology and a major candidate for the next-generation lithography (NGL) designed to complement and supplement current optical lithographic techniques for future chip manufacturing. In this Review, the recent developments of IPL technology are examined with an emphasis on its ability to fabricate a wide variety of nanostructures for the semiconductor industry. Following an introduction of the uniqueness and strength of the technology, the basics of ion-source development and ion-target interactions with and without chemical enhancement are presented. The developments in equipment systems, masks, and resists are subsequently studied. The resolution of printed nanostructures and the corresponding throughput of the current system are assessed for NGL. Finally, concluding remarks are presented to summarize the strengths and weaknesses of the current technology and to suggest the scope for,future improvement.
引用
收藏
页码:594 / 608
页数:15
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