Forecasting the stable isomers of [Si, C, S]+ and [Si, C, S]- systems

被引:0
|
作者
Zhou Zhong-Jun [1 ]
Liu Hiu-Ling [1 ]
Huang Xu-Ri [1 ]
Sun Chia-Chung [1 ]
机构
[1] Jilin Univ, Inst Theoret Chem, State Key Lab Theoret & Computat Chem, Changchun 130023, Peoples R China
关键词
theoretical study; Si; C; S](+); S](-); isomer; potential energy surface;
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The doublet potential energy surfaces of [Si, C, S](+) and [Si, C, S](-) systems were investigated by the DFT, QCISD, and CCSD(T) methods. At the QCISD/6-311 +G(d) level, it is shown that a total of 3 minimum isomers are connected by 2 transitional states and 4 minimum isomers are connected by 2 transitional states for [Si, C, S](+) and [Si, C, S](-) systems, respectively. Through an analysis of thermodynamic and kinetic stabilities, there is a linear doublet isomer [Si-C-S](+) located as the stable isomer in [Si, C, S](+) system. In doublet [Si, C. S](-) system, two stable isomers are located, which are a linear [Si-C-S] and a three-membered ring form c-[SiCS](-).
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页码:1637 / 1640
页数:4
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