Dynamic stress-induced high-frequency noise degradations in nMOSFETs

被引：0
|
作者：
Yu, CZ [1 ]
Yuan, JS
Sadat, A
机构：
[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32826 USA
[2] Conexant Syst, Long Beach, CA 90926 USA
来源：
MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2005.07.096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 mu m nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1794 / 1799
页数：6
相关论文
共 50 条
  • [1] Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress
    Su, Hao
    Wang, Hong
    Liao, Hong
    Hu, Hang
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (11) : 3078 - 3083
  • [2] Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
    Wang, Sheng-Chun
    Su, Pin
    Chen, Kun-Ming
    Chen, Bo-Yuan
    Huang, Guo-Wei
    Hung, Cheng-Chou
    Huang, Sheng-Yi
    Fan, Cheng-Wen
    Tzeng, Chih-Yuh
    Chou, Sam
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (03) : 895 - 900
  • [3] The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
    Yeh, Kuo-Liang
    Guo, Jyh-Chyurn
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (11) : 3092 - 3100
  • [4] Effect of FN stress and gate-oxide breakdown on high-frequency noise characteristics in deep-submicrometer nMOSFETs
    Zeng, R
    Wang, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) : 390 - 393
  • [5] Evaluation of stress-induced effects in electronic characteristics of nMOSFETs
    Koganemaru, Masaaki
    Ikeda, Toru
    Miyazaki, Noriyuki
    Tomokage, Hajime
    [J]. ESTC 2006: 1ST ELECTRONICS SYSTEMINTEGRATION TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2006, : 1174 - +
  • [6] Improved detection of stress-induced ischemia using analysis of high-frequency ECG components
    Toledo, Eran
    Almogy, Nechi
    Lipton, Jonathan A.
    Warren, Stafford G.
    Broce, Michael
    Lilly, Donald R.
    Lucas, Dan B.
    Wagner, Galen S.
    [J]. JOURNAL OF THE AMERICAN COLLEGE OF CARDIOLOGY, 2007, 49 (09) : 110A - 110A
  • [7] Stress-induced degradation in strain-engineered nMOSFETs
    Maiti, T. K.
    Mahato, S. S.
    Bera, M. K.
    Sengupta, M.
    Chakraborty, P.
    Mahata, C.
    Chakraborty, A.
    Maiti, C. K.
    [J]. IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2008, : 193 - +
  • [8] Incremental diagnostic value of high-frequency QRS analysis for identifying stress-induced ischemia
    Sharir, T
    Merzon, K
    Kruchin, I
    Boyko, A
    Silber, H
    [J]. JOURNAL OF THE AMERICAN COLLEGE OF CARDIOLOGY, 2006, 47 (04) : 132A - 132A
  • [9] Dynamic Filtration of High-Frequency Noise in ECG Signal
    Bortolan, Giovanni
    Christov, Ivaylo
    [J]. 2014 COMPUTING IN CARDIOLOGY CONFERENCE (CINC), VOL 41, 2014, 41 : 1089 - 1092
  • [10] Low-frequency Noise and Stress-Induced Degradation in LDMOS
    Mahmud, M. I.
    Celik-Butler, Z.
    Hao, P.
    Hou, F.
    Amey, B.
    Khan, T.
    Huang, W.
    [J]. 2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 352 - 355
12345