Infrared absorption induced by field effect from a metal-insulator-semiconductor diode fabricated with regioregular poly(3-hexylthiophene)

被引：8
|
作者：
Takao, H [1 ]
Furukawa, Y [1 ]
机构：
[1] Waseda Univ, Sch Sci & Engn, Dept Chem, Shinjuku Ku, Tokyo, Japan
来源：
CHEMISTRY LETTERS | 2003年 / 32卷 / 12期
关键词：
D O I：
10.1246/cl.2003.1168
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Infrared absorption induced by field effect from a metal-insulator-semiconductor diode with an Au/aluminum oxide/regioregular poly(3-hexylthiophene) structure has been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The observed bands have been attributed to carriers (positive polarons) injected into the polymer layer and accumulated near the surface of the layer.
引用
收藏
页码：1168 / 1169
页数：2
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