Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

被引：10

作者：

Zube, Christian ^{[1
]}

Malindretos, Joerg ^{[1
]}

Watschke, Lars ^{[1
]}

Zamani, Reza R. ^{[1
]}

Disterheft, David ^{[1
]}

Ulbrich, Rainer G. ^{[1
]}

Rizzi, Angela ^{[1
]}

Iza, Michael ^{[2
]}

Keller, Stacia ^{[2
]}

DenBaars, Steven P. ^{[2
]}

机构：

[1] Georg August Univ Gottingen, Phys Inst 4, D-37077 Gottingen, Germany

[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 03期

关键词：

D O I：

10.1063/1.5000348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 x 10(18) cm(-3) were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization. Published by AIP Publishing.

引用

页数：7

共 50 条

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