Quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

被引：0
|
作者：
Wang, MS
Niu, LR
Yu, SY
Liu, J
Yao, DJ
机构：
来源：
ICMWFST '96 - 1996 4TH INTERNATIONAL CONFERENCE ON MILLIMETER WAVE AND FAR INFRARED SCIENCE AND TECHNOLOGY, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/ICMWFT.1996.574715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quasi-monolithic Ka-band voltage control oscillators (VCOs) have been developed based on 0.2 mu m pseudomorphic AlGaAs/InGaAs/GaAs low noise HEMT technology. The designed VCO incorporates a PM HEMT, a Schottky diode, matching network and bias circuit. An output power of 10mW at 26GHz was obtained. Frequency of 26.86GHz with 340MHz of tuning bandwidth and 37GHz with 160MHz of tuning bandwidth have been measured. The chip size is 2.5mm*3.5mm. This is the first report of a quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs at home.
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页码：62 / 65
页数：4
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