III-nitride nanowires: Novel materials for solid-state lighting

被引:4
|
作者
Wang, George T. [1 ]
Li, Qiming [1 ]
Huang, Jianyu [1 ]
Talin, A. Alec [2 ]
Armstrong, Andrew [1 ]
Upadhya, Prashanth C. [3 ]
Prasankumar, Rohit P. [3 ]
机构
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
[2] NIST, Gaithersburg, MD 20899 USA
[3] Los Alamos Natl Lab, Los Alamos, NM 87544 USA
关键词
GaN; nanowire; nanorod; LED; solid-state lighting; cathodoluminescence; vapor-liquid-solid; chemical vapor deposition; InGaN; templated growth; A-PLANE GAN; HETEROSTRUCTURES; SAPPHIRE; GROWTH; PHOTOCONDUCTIVITY;
D O I
10.1117/12.872776
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices. However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Advantages of III-nitride laser diodes in solid-state lighting
    Wierer, Jonathan J., Jr.
    Tsao, Jeffrey Y.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (05): : 980 - 985
  • [2] Semipolar III-Nitride laser diodes for solid-state lighting
    Mehari, Shlomo
    Cohen, Daniel A.
    Becerra, Daniel L.
    Zhang, Haojun
    Weisbuch, Claude
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    [J]. NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIII, 2019, 10939
  • [3] The potential of III-nitride laser diodes for solid-state lighting
    Wierer, Jonathan J., Jr.
    Tsao, Jeffrey Y.
    Sizov, Dmitry S.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 674 - 677
  • [4] Study of III-nitride laser diodes for solid-state lighting
    Wierer, Jonathan J., Jr.
    Sizov, Dmitry S.
    Neumann, Alexander
    Brueck, Steven R. J.
    Tsao, Jeffrey Y.
    [J]. 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2013,
  • [5] High-power III-nitride emitters for solid-state lighting
    Krames, MR
    Collins, JBD
    Gardner, NF
    Gotz, W
    Lowery, CH
    Ludowise, M
    Martin, PS
    Mueller, G
    Mueller-Mach, R
    Rudaz, S
    Steigerwald, DA
    Stockman, SA
    Wierer, JJ
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (02): : 237 - 245
  • [6] Tutorial on III-Nitride Solid State Lighting and Smart Lighting
    Tansu, Nelson
    Tan, Chee-Keong
    Wierer, Jonathan J.
    [J]. 2015 PHOTONICS CONFERENCE (IPC), 2015,
  • [7] III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications
    Wang, George T.
    Li, Qiming
    Huang, Jianyu
    Wierer, Jonathan
    Armstrong, Andrew
    Lin, Yong
    Upadhya, Prashanth
    Prasankumar, Rohit
    [J]. WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 12, 2011, 35 (06): : 3 - 11
  • [8] The potential of III-nitride laser diodes as a future solid-state lighting source
    Wierer, Jonathan J., Jr.
    [J]. 2013 IEEE PHOTONICS CONFERENCE (IPC), 2013, : 173 - 173
  • [9] III-nitride quantum dots for ultra-efficient solid-state lighting
    Wierer, Jonathan J., Jr.
    Tansu, Nelson
    Fischer, Arthur J.
    Tsao, Jeffrey Y.
    [J]. LASER & PHOTONICS REVIEWS, 2016, 10 (04) : 612 - 622
  • [10] III-nitride tunnel junctions for efficient solid state lighting
    Krishnamoorthy, Sriram
    Akyol, Fatih
    Rajan, Siddharth
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES IX, 2014, 8986