Combustion wave of monocrystalline silicon induced by millisecond laser

被引:0
|
作者
Guo, Ming [1 ,2 ]
Zhang, Yongxiang [3 ]
Zhang, Wenying [1 ,2 ]
Xu, Chunyan [1 ,2 ]
机构
[1] Jilin Engn Normal Univ, Inst Interdisciplinary Quantum Informat Technol, Changchun 130052, Peoples R China
[2] Jilin Engn Lab Quantum Informat Technol, Changchun 130052, Peoples R China
[3] Changchun Univ Sci & Technol, Coll Opt & Elect Informat, Changchun 130022, Peoples R China
关键词
millisecond laser; monocrystalline silicon; combustion wave; threshold; expansion speed;
D O I
10.1117/12.2543851
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In order to study the evolution state of silicon combustion wave induced by millisecond pulse laser in monocrystalline silicon, Using optical shadow imaging to measure the distance and time of combustion wave, analyze the plasma state at different times, Study the influence from different laser energy density and the number of pluses to expansion rate and expansion distance. The results of research show that the direction of combustion wave expand is mainly the reverse of the incident laser. The pulse train of millisecond laser act on monocrystalline silicon produce a temperature accumulation effect, and the threshold value declines obviously. the peak expansion rate increases rapidly as the energy density increases.
引用
收藏
页数:6
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