Enhanced efficiency of near-UV emitting LEDs for solid-state Righting applications - art. no. 67970O

被引：0

作者：

Zhu, D. ^{[1
]}

Corbett, B. ^{[2
]}

Roycroflb, B. ^{[2
]}

Maaskant, P. ^{[2
]}

McAleese, C. ^{[1
]}

Akhter, M. ^{[2
]}

Kappers, M. J. ^{[1
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Tyndall Natl Inst, Cork, Ireland

来源：

MANUFACTURING LEDS FOR LIGHTING AND DISPLAYS | 2007年 / 6797卷

基金：

英国工程与自然科学研究理事会;

关键词：

near-UV emitting LEDs; flip-chip; InGaN; AlInGaN; MOVPE;

D O I：

10.1117/12.758799

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The performance of a series of near-UV (similar to 385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the light-emitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50 mu m in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm(2)/str.

引用

页码：O7970 / O7970

页数：7

共 10 条

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