Dual Threshold Voltage Organic Thin-Film Transistor Technology

被引:34
|
作者
Nausieda, Ivan [1 ]
Ryu, Kevin Kyungbum [1 ]
Da He, David [1 ]
Akinwande, Akintunde Ibitayo [1 ]
Bulovic, Vladimir [1 ]
Sodini, Charles G. [1 ]
机构
[1] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA
关键词
Digital integrated circuits; inverters; organic compounds; thin-film transistors (TFTs); WORK FUNCTION; NOISE MARGIN; MOBILITY; POLYMER; POWER; GATE;
D O I
10.1109/TED.2010.2072550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fully photolithographic dual threshold voltage (V-T) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The near-room-temperature (<= 95 degrees C) process produces integrated dual V-T pentacene-based p-channel transistors. The two V-T's are enabled by using two gate metals of low (aluminum) and high (platinum) work function. The Al and Pt gate OTFTs exhibit nominally identical current-voltage transfer curves shifted by an amount Delta V-T. The availability of a high-V-T device enables area-efficient zero-V-GS high-output-resistance current sources, enabling high-gain inverters. We present positive noise margin inverters and rail-to-rail ring oscillators powered by a 3-V supply-one of the lowest supply voltages reported for OTFT circuits. These results show that integrating n- and p-channel organic devices is not mandatory to achieve functional area-efficient low-power organic integrated circuits.
引用
收藏
页码:3027 / 3032
页数:6
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