Metal-insulator transition and magnetoresistance in strongly correlated 2D electron systems

被引:0
|
作者
Okamoto, T [1 ]
Kawaji, S [1 ]
机构
[1] Gakushuin Univ, Dept Phys, Toshima Ku, Tokyo 1718588, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have systematically investigated on magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe heterostructures at low temperatures. Similar dependence of the resistivity on the parallel magnetic field is observed over very wide resistivity range from p similar to 10(2)Omega in the metallic region to p similar to 10(7)Omega in the insulating region.
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页码:1001 / 1002
页数:2
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