A 1.2-dB Noise Figure Broadband GaAs Low-Noise Amplifier with 17-dB Gain for Millimeter-Wave 5G Base-Station

被引：0
|
作者：
Xu, Chenyu [1 ]
Zhao, Dixian [1 ]
机构：
[1] Southeast Univ, Sch Informat Sci & Engn, Natl Mobile Commun Res Lab, Nanjing 211189, Jiangsu, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
关键词：
low-noise amplifier; noise figure; pHEMT; GaAs; 5G; millimeter-wave;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 24-30GHz low -noise amplifier (LNA) with 1.2 -dB noise figure (NF) is designed for millimeter-wave 5G stations. The LNA has 2 stages, 1 stage utilizes common -source topology with source degeneration inductor for simultaneous noise and input match. 2nd stage uses the same structure for staging match and the trade-off between gain and noise optimization. A structure of parallel resistor and capacitor is utilized for bandwidth and stability. Simulation result shows that the LNA achieves peak gain of 17.8 -dB, and the 1 -dB bandwidth is over 6-GHz. NF is below 1.35 -dB in the bandwidth.
引用
收藏
页码：1131 / 1133
页数：3
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