Preparation and characteristic of p-type ZnO films by Al-N codoping technique

被引：10
|
作者：
Zhang, ZH [1 ]
Ye, ZZ [1 ]
Ma, DW [1 ]
Zhu, LP [1 ]
Zhou, T [1 ]
Zhao, BH [1 ]
Zhu-Ge, F [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 22期
基金：
中国国家自然科学基金;
关键词：
ZnO; Al-N codoping; p-type conduction; DC reactive magnetron sputtering;
D O I：
10.1016/j.matlet.2005.04.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
p-Type conduction in ZnO thin films have been realized by the Al-N codoping method. The codoped films with c-axis orientations were prepared at various substrate temperatures in the range of 300-600 degrees C in pure N2O ambient The codoped film prepared at 500 degrees C shows the lowest resistivity of 54.8 Omega cm and highest carrier concentration of 1.32 x 10(18) cm(-3), which is about 10(4) times higher than that of N doped ZnO, and the film shows the best crystal quality. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：2732 / 2734
页数：3
相关论文
共 50 条
  • [1] Preparation of p-type ZnO films by Al plus N-codoping method
    Ye, ZZ
    Zhuge, F
    Lu, JG
    Zhang, ZH
    Zhu, LP
    Zhao, BH
    Huang, JY
    JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) : 127 - 132
  • [2] Al-N codoping and p-type conductivity in ZnO using different nitrogen sources
    Zhu, LP
    Ye, ZZ
    Zhuge, F
    Yuan, GD
    Lu, JG
    SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3): : 354 - 356
  • [3] Properties of p-type Al-N codoped ZnO thin films
    Hamid, Haslinda Abdul
    Abdullah, Mat Johar
    Aziz, Azian Abdul
    Rosli, Siti Azlina
    2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 502 - +
  • [4] P-Type conduction in Al-N co-doped ZnO films
    Yuan, GD
    Ye, ZZ
    Zhu, LP
    Zeng, YJ
    Huang, JY
    Qian, Q
    Lu, JG
    MATERIALS LETTERS, 2004, 58 (29) : 3741 - 3744
  • [5] Induction of p-type conduction in sputtered deposited Al-N codoped ZnO thin films
    Kumar, Amit
    Kumar, Manoj
    Singh, Beer Pal
    OPTICS COMMUNICATIONS, 2010, 283 (20) : 3994 - 3997
  • [6] p-type in ZnO:N by codoping with Cr
    Kaminska, E
    Piotrowska, A
    Kossut, J
    Butkute, R
    Dobrowolski, W
    Golaszewska, K
    Barcz, A
    Jakiela, R
    Dynowska, E
    Przezdziecka, E
    Wawer, D
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 335 - 340
  • [7] Variation of N acceptor energy induced by Al-N codoping in ZnO films
    Su Jianfeng
    Tang Chunjuan
    Niu Qiang
    Wang Changqing
    Fu Zhuxi
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 500 (01) : 5 - 8
  • [8] Preparation of Amorphous p-type InGaZnO4 Films by Codoping of Al and N Atoms
    Kobayashi, Kenkichiro
    Zhang, Xinyu
    Kohno, Yoshiumi
    Tomita, Yasumasa
    Maeda, Yasuhisa
    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1, 2012, 19 : 151 - 154
  • [9] Sputtered Al-N codoped p-type transparent ZnO thin films suitable for optoelectronic devices
    Pathak, Trilok Kumar
    Kumar, Vinod
    Purohit, L. P.
    OPTIK, 2016, 127 (02): : 603 - 607
  • [10] p-type electrical conduction in ZnO thin films by Ga and N codoping
    Joseph, M
    Tabata, H
    Kawai, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A): : L1205 - L1207
12345