Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes

被引:17
|
作者
Chee, Kuan W. A. [1 ,2 ,4 ]
Guo, Wei [2 ]
Wang, John R. [3 ]
Wang, Yong [4 ]
Chen, Yue-e [5 ]
Ye, Jichun [2 ]
机构
[1] Univ Nottingham Ningbo, Fac Sci & Engn, Dept Elect & Elect Engn, Ningbo 315100, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[4] Shandong Acad Sci, Laser Res Inst, Shanyisuo Bldg,37 Miaoling Rd, Qingdao 226100, Shandong, Peoples R China
[5] Yanshan Univ, Coll Sci, Qinhuangdao 066004, Hebei, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Photonic crystals; Ray tracing; Photoluminescence; Periodic nanostructures; Etching; Heat treatment; EXTERNAL QUANTUM EFFICIENCY; THIN-FILM; EXTRACTION EFFICIENCY; SPONTANEOUS EMISSION; ENHANCEMENT; GAN; PHOTOLUMINESCENCE; WELLS; BLUE; ALN;
D O I
10.1016/j.matdes.2018.08.058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photonic crystal processing was performed using nanosphere lithography as a low-cost procedure to enhance the quantum efficiency of AlGaN-based ultraviolet light emitting diodes. Spectral transmissivity/reflectivity and photoluminescence measurements, in conjunction with finite-element modeling and electromagnetic simulations, provide an indication of radiance enhancement with a photonic crystal periodicity comparable to the emission wavelength. To recondition the plasma-damaged sidewalls, post-processing methods based on high temperature annealing and surface treatment were evaluated, which in general, established a significant increase in light extraction efficiency. X-ray photoelectron spectroscopy clarified the formation of surface oxides and hydroxides on the as-fabricated nanostructures, and their dissolution after wet-chemical processing is linked to enhanced optical output. Hydroxyl-termination was found to prevail after KOH etching, but significantly reduced after HCl or H3PO4 treatment. The two-step sequence of HCl followed by KOH treatment provided the best quality nanotextured surface for optical emission in this study, as indicated by the nearly 14.5-fold enhancement in photoluminescence intensity. (C) 2018 Elsevier Ltd.
引用
收藏
页码:661 / 670
页数:10
相关论文
共 50 条
  • [1] Fabrication of AlGaN-based vertical light-emitting diodes
    Bae, Seon Min
    Jeon, Hunsoo
    Lee, Gang Seok
    Jung, Se-Gyo
    Kim, Kyoung Hwa
    Yi, Sam Nyung
    Yang, Min
    Ahn, Hyung Soo
    Yu, Young Moon
    Kim, Suck-Whan
    Cheon, Seong Hak
    Ha, Hong-Ju
    Sawaki, Nobuhiko
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2012, 13 : S75 - S77
  • [2] AlGaN-based ultraviolet light-emitting diodes: challenges and opportunities
    Usman, Muhammad
    Malik, Shahzeb
    Munsif, Munaza
    LUMINESCENCE, 2021, 36 (02) : 294 - 305
  • [3] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
    Hirayama, Hideki
    Kamata, Norihiko
    Tsubaki, Kenji
    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 267 - 299
  • [4] Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
    Chen, Yuxuan
    Ben, Jianwei
    Xu, Fujun
    Li, Jinchai
    Chen, Yang
    Sun, Xiaojuan
    Li, Dabing
    FUNDAMENTAL RESEARCH, 2021, 1 (06): : 717 - 734
  • [5] Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes
    Guo, Yanan
    Zhang, Yun
    Wang, Junxi
    Yan, Jianchang
    Tian, Yingdong
    Chen, Xiang
    Sun, Lili
    Wei, Tongbo
    Li, Jinmin
    2015 12TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA), 2015, : 4 - 7
  • [6] Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes
    Jiang, Rong
    Yan, Dawei
    Lu, Hai
    Zhang, Rong
    Chen, Dunjun
    Zheng, Youdou
    CHINESE SCIENCE BULLETIN, 2014, 59 (12): : 1276 - 1279
  • [7] AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers
    Kim, KH
    Fan, ZY
    Khizar, M
    Nakarmi, ML
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4777 - 4779
  • [8] Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
    Xu, Ruiqiang
    Kang, Qiushi
    Zhang, Youwei
    Zhang, Xiaoli
    Zhang, Zihui
    MICROMACHINES, 2023, 14 (04)
  • [9] High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
    Passow, Thorsten
    Gutt, Richard
    Kunzer, Michael
    Pletschen, Wilfried
    Kirste, Lutz
    Forghani, Kamran
    Scholz, Ferdinand
    Koehler, Klaus
    Wagner, Joachim
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [10] Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale
    Guo, Yanan
    Yan, Jianchang
    Zhang, Yun
    Wang, Junxi
    Li, Jinmin
    JOURNAL OF NANOPHOTONICS, 2018, 12 (04)