Radiation-induced oscillatory magnetoresistance in a tilted magnetic field in GaAs/AlxGa1-xAs devices -: art. no. 075327

被引：81
|
作者：
Mani, RG [1 ]
机构：
[1] Harvard Univ, Gordon McKay Lab Appl Sci, Cambridge, MA 02138 USA
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.72.075327
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high-mobility two-dimensional electron system (2DES). In analogy to the 2D Shubnikov-de Haas effect, the characteristic field B-f and the period of the radiation-induced magnetoresistance oscillations appear dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component B-parallel to in the range of 0.6 < B(parallel to)1.2 T at a tilt angle of theta=80 degrees leaves the oscillatory pattern essentially unchanged.
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