Dry Development Rinse Process for Ultimate Resolution Improvement via Pattern Collapse mitigation

被引：3
|
作者：
Sayan, Safak [1 ,2 ]
Tao, Zheng [2 ]
Chan, B. T. [2 ]
De Simone, Danilo [2 ]
Kuwahara, Yuhei [3 ]
Nafus, Kathleen [3 ]
Leeson, Michael J. [4 ]
Gstrein, Florian [4 ]
Singh, Arjun [2 ]
Vandenberghe, Geert [2 ]
机构：
[1] Intel Corp, Santa Clara, CA 95054 USA
[2] IMEC, B-3001 Louvain, Belgium
[3] Tokyo Electron Europe, NL-6546 BB Nijmegen, Netherlands
[4] Intel Corp, Components Res, Hillsboro, OR 97124 USA
来源：
ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXII | 2015年 / 9425卷
关键词：
Dry Development Rinse Process; DDRP; Dry Development Rinse Material; DDRM; Pattern collapse; ultimate resolution; line width roughness; LWR; exposure latitude;
D O I：
10.1117/12.2086486
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页数：6
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