Semiconductor nanowires for solid state lighting:: simulation, epitaxy, integration, optical and electrical characterization

被引：0

作者：

Levy, F. ^{[1
]}

Desieres, Y. ^{[1
]}

Ferret, P. ^{[1
]}

Fichet, S. ^{[1
]}

Gidon, S. ^{[1
]}

Gilet, P. ^{[1
]}

Noel, P. ^{[1
]}

Robin, I-C. ^{[1
]}

Romain-Latu, E. ^{[1
]}

Rosina, M. ^{[1
]}

Songmuang, R. ^{[1
]}

Feuillet, G. ^{[1
]}

Daudin, B. ^{[2
]}

Chelnokov, A. ^{[1
]}

机构：

[1] MINATEC, CEA LETI, F-38054 Grenoble 9, France

[2] CEA Grenoble, DRFMC, F-38054 Grenoble 9, France

来源：

MANUFACTURING LEDS FOR LIGHTING AND DISPLAYS | 2007年 / 6797卷

关键词：

light emitting diode; nanowires; ZnO; GaN; epitaxy; integration technology; characterization; electromagnetic simulation;

D O I：

10.1117/12.768615

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.

引用

页数：9

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