High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy

Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111) substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques. High-quality single crystalline Ge(111) layers on Si(111) substrates with a smooth Ge surface and an abrupt interface between Ge and Si are obtained. An XRD rocking curve scan of the Ge(111) diffraction peak shows a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600 degrees C with a ramp-up rate of 20 degrees C/s and a holding time of 1 min. The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.